Patent AT-E400891-T1: [Translated] METHOD FOR FORMING A SILICON EPITAXIAL LAYER

A silicon epitaxial layer is formed on the semiconductor underlayer of a target substrate (W) in the process chamber (2). This forming method includes a pressure reducing step of reducing the pressure inside the process chamber (2) accommodating the target substrate (W), a vapor phase growth step of introducing a film formation gas containing silane gas into the process chamber (2) to grow a silicon epitaxial layer on the semiconductor underlayer, and a hydrogen chloride treatment step and a hydrogen heat treatment step performed therebetween. The hydrogen chloride treatment step is arranged to introduce the first pre-treatment gas containing hydrogen chloride gas into the process chamber (2), thereby treating the atmosphere inside the process chamber (2). The hydrogen heat treatment step is arranged to introduce the second pre-treatment gas containing hydrogen gas into the process chamber (2), thereby treating the surface of the semiconductor underlayer. <IMAGE>